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IRFIZ48N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.052 ––– V/°C
Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.016
?
V GS = 10V, I D = 22A
––– 32 ––– R G = 5.1 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0 ––– 4.0 V V DS = V GS , I D = 250μA
22 ––– ––– S V DS = 25V, I D = 32A
––– ––– 25 V DS = 55V, V GS = 0V
μA
––– ––– 250 V DS = 44V, V GS = 0V, T J = 150°C
––– ––– 100 V GS = 20V
nA
––– ––– -100 V GS = -20V
––– ––– 89 I D = 32A
––– ––– 20 nC V DS = 44V
––– ––– 39 V GS = 10V, See Fig. 6 and 13
––– 11 ––– V DD = 28V
––– 78 ––– I D = 32A
ns
––– 48 ––– R D = 0.85 ?, See Fig. 10
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
Input Capacitance
–––
1900 ––– V GS = 0V
––– 620 ––– V DS = 25V
C oss
C rss
C
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
pF
––– 270 ––– ? = 1.0MHz, See Fig. 5
––– 12 ––– ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
36
210
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
–––
–––
94
360
1.3
140
540
V
ns
nC
T J = 25°C, I S = 22A, V GS = 0V
T J = 25°C, I F = 32A
di/dt = 100A/μs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V DD = 25V, starting T J = 25°C, L = 530μH
R G = 25 ? , I AS = 32A. (See Figure 12)
I SD ≤ 32A, di/dt ≤ 250A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
t=60s, ?=60Hz
Uses IRFZ48N data and test conditions
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